Si-PIC光回路検査及び組立装置

Si-PIC光回路検査及び組立装置


High power wafer prober system

High power wafer prober system

The high power wafer prober system adopts a closed cavity form and is mainly used in power semiconductor wafer level testing such as SiC, GaN and Si IGBT. The probe station integrates moving components, heating components, cooling components, probe station, and wafer chucks in a closed cavity to build a safe and stable wafer level testing environment. The probe station meets special testing requirements under extreme conditions such as high temperature, low temperature, high voltage, and high current . It also protects the devices from physical damage and contamination including oxidation,condensation , frost formation , and electrical arc breakdown . 

Wide range of applications

Support high-voltage and high-urrent testing of power semiconductor including SiC and GaN device

High vacuum and puncture voltage

Vacuum < 1E-4 Torr

Puncture voltage 10kV

High Current up to 1200A

Automated test

Customizable manual, semi-automatic, and fully automatic solutions